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TK10J80E,S1E

TK10J80E,S1E
Kuvat ovat vain viitteellisiä
Osa numero
TK10J80E,S1E
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Height
20 mm
Id - Continuous Drain Current
10 A
Length
15.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PN-3
Pd - Power Dissipation
250 W
Product Type
MOSFET
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
40 ns
Series
TK10J80E
Technology
SI
Tradename
MOSVIII
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
80 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Everything is fine!
Seems well have not tested
Looks good
all is well. checked work. seller recommend.
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Aiheeseen liittyvät avainsanat TK10

  • TK10J80E,S1E Integroitu
  • TK10J80E,S1E RoHS
  • TK10J80E,S1E PDF-tietosivu
  • TK10J80E,S1E Datalehdet
  • TK10J80E,S1E Osa
  • TK10J80E,S1E Ostaa
  • TK10J80E,S1E Jakelija
  • TK10J80E,S1E PDF
  • TK10J80E,S1E Component
  • TK10J80E,S1E ICS
  • TK10J80E,S1E Lataa PDF
  • TK10J80E,S1E Lataa tiedot
  • TK10J80E,S1E Toimittaa
  • TK10J80E,S1E toimittaja
  • TK10J80E,S1E Hinta
  • TK10J80E,S1E Tietolomake
  • TK10J80E,S1E Kuva
  • TK10J80E,S1E Kuva
  • TK10J80E,S1E inventaario
  • TK10J80E,S1E kalusto
  • TK10J80E,S1E Alkuperäinen
  • TK10J80E,S1E halvin
  • TK10J80E,S1E Erinomainen
  • TK10J80E,S1E Lyijytön
  • TK10J80E,S1E määrittely
  • TK10J80E,S1E Kuumat tarjoukset
  • TK10J80E,S1E Break Hinta
  • TK10J80E,S1E Tekniset tiedot

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