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TK100A08N1,S4X

TK100A08N1,S4X
Kuvat ovat vain viitteellisiä
Osa numero
TK100A08N1,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Height
15 mm
Id - Continuous Drain Current
100 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
130 nC
Rds On - Drain-Source Resistance
2.6 mOhms
Series
TK100A08N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
80 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Works. Find the price of this product is very good
Fast shippng. Good quality. I recomend this seller.
The goods are OK, thank you dealers.
Long Service and Russia!
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Aiheeseen liittyvät avainsanat TK10

  • TK100A08N1,S4X Integroitu
  • TK100A08N1,S4X RoHS
  • TK100A08N1,S4X PDF-tietosivu
  • TK100A08N1,S4X Datalehdet
  • TK100A08N1,S4X Osa
  • TK100A08N1,S4X Ostaa
  • TK100A08N1,S4X Jakelija
  • TK100A08N1,S4X PDF
  • TK100A08N1,S4X Component
  • TK100A08N1,S4X ICS
  • TK100A08N1,S4X Lataa PDF
  • TK100A08N1,S4X Lataa tiedot
  • TK100A08N1,S4X Toimittaa
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  • TK100A08N1,S4X Kuumat tarjoukset
  • TK100A08N1,S4X Break Hinta
  • TK100A08N1,S4X Tekniset tiedot

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