Osa numero TK100A06N1,S4X Luokat MOSFET RoHS Datalehdet TK100A06N1,S4X Kuvaus MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Luokat MOSFET Channel Mode Enhancement Configuration Single Height 15 mm Id - Continuous Drain Current 100 A Length 10 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Pd - Power Dissipation 45 W Product Type MOSFET Qg - Gate Charge 140 nC Rds On - Drain-Source Resistance 2.2 mOhms Series TK100A06N1 Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 4 V Width 4.5 mm