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TK10E60W,S1VX

TK10E60W,S1VX
Kuvat ovat vain viitteellisiä
Osa numero
TK10E60W,S1VX
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15.1 mm
Id - Continuous Drain Current
9.7 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
22 ns
Series
TK10E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
the photo in comparison with cheap. Delivery fast
Everything is fine!
Great product. Arrived ahead of time. Thank you
Lisää

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Aiheeseen liittyvät avainsanat TK10

  • TK10E60W,S1VX Integroitu
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  • TK10E60W,S1VX PDF-tietosivu
  • TK10E60W,S1VX Datalehdet
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  • TK10E60W,S1VX Hinta
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  • TK10E60W,S1VX Tekniset tiedot

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