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SQ2351ES-T1_GE3

SQ2351ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2351ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P-Channel 20V AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
6 s
Id - Continuous Drain Current
3.2 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-236-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
5.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
80 mOhms
Rise Time
18 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Thank You all fine, packed very well
Perfectly.
High Quality driver, works excellent. It came to Moscow for 7 days.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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Aiheeseen liittyvät avainsanat SQ23

  • SQ2351ES-T1_GE3 Integroitu
  • SQ2351ES-T1_GE3 RoHS
  • SQ2351ES-T1_GE3 PDF-tietosivu
  • SQ2351ES-T1_GE3 Datalehdet
  • SQ2351ES-T1_GE3 Osa
  • SQ2351ES-T1_GE3 Ostaa
  • SQ2351ES-T1_GE3 Jakelija
  • SQ2351ES-T1_GE3 PDF
  • SQ2351ES-T1_GE3 Component
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  • SQ2351ES-T1_GE3 Lataa PDF
  • SQ2351ES-T1_GE3 Lataa tiedot
  • SQ2351ES-T1_GE3 Toimittaa
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  • SQ2351ES-T1_GE3 Kuumat tarjoukset
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  • SQ2351ES-T1_GE3 Tekniset tiedot

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