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SQ2303ES-T1_GE3

SQ2303ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2303ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P-Channel 30V AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.9 W
Product Type
MOSFET
Qg - Gate Charge
4.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Thank You all fine, packed very well
Works. Find the price of this product is very good
Fast shippng. Good quality. I recomend this seller.
Works. Recommend
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Aiheeseen liittyvät avainsanat SQ23

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