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SQ2309ES-T1_GE3

SQ2309ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2309ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V -1.7A 2W AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
9 ns
Forward Transconductance - Min
1.8 S
Id - Continuous Drain Current
1.7 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-236-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
8.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
268 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
goods very well received very good quality
fast delivery, item as described, thanks!!
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
Long Service and Russia!
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Aiheeseen liittyvät avainsanat SQ23

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