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DN2535N3-G

DN2535N3-G
Kuvat ovat vain viitteellisiä
Osa numero
DN2535N3-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 350V 25Ohm
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Depletion
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
325 mS
Height
5.33 mm
Id - Continuous Drain Current
120 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
25 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
350 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Perfectly.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Works. Recommend
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Lisää

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Aiheeseen liittyvät avainsanat DN25

  • DN2535N3-G Integroitu
  • DN2535N3-G RoHS
  • DN2535N3-G PDF-tietosivu
  • DN2535N3-G Datalehdet
  • DN2535N3-G Osa
  • DN2535N3-G Ostaa
  • DN2535N3-G Jakelija
  • DN2535N3-G PDF
  • DN2535N3-G Component
  • DN2535N3-G ICS
  • DN2535N3-G Lataa PDF
  • DN2535N3-G Lataa tiedot
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  • DN2535N3-G Hinta
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Suositut haut

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