DN2530N8-G

Kuvat ovat vain viitteellisiä
Osa numero
DN2530N8-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 300V 12Ohm

tekniset tiedot

Luokat
MOSFET
Channel Mode
Depletion
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
300 ms
Height
1.6 mm
Id - Continuous Drain Current
200 mA
Length
4.6 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.6 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
12 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
300 V
Vgs - Gate-Source Voltage
20 V
Width
2.6 mm

Uusimmat arvostelut

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Goods came in two weeks. Well packed. Track number tracked

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Looks good

Packed medium, in transit could поврелиться. But since it's safe, work perfectly

Aiheeseen liittyvät avainsanat DN25

  • DN2530N8-G Integroitu
  • DN2530N8-G RoHS
  • DN2530N8-G PDF-tietosivu
  • DN2530N8-G Datalehdet
  • DN2530N8-G Osa
  • DN2530N8-G Ostaa
  • DN2530N8-G Jakelija
  • DN2530N8-G PDF
  • DN2530N8-G Component
  • DN2530N8-G ICS
  • DN2530N8-G Lataa PDF
  • DN2530N8-G Lataa tiedot
  • DN2530N8-G Toimittaa
  • DN2530N8-G toimittaja
  • DN2530N8-G Hinta
  • DN2530N8-G Tietolomake
  • DN2530N8-G Kuva
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  • DN2530N8-G inventaario
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  • DN2530N8-G Break Hinta
  • DN2530N8-G Tekniset tiedot