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DN2530N3-G

DN2530N3-G
Kuvat ovat vain viitteellisiä
Osa numero
DN2530N3-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 300V 12Ohm
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Depletion
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
300 ms
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
740 mW
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
12 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
300 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Looks good
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Aiheeseen liittyvät avainsanat DN25

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  • DN2530N3-G Osa
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  • DN2530N3-G Jakelija
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Suositut haut

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