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SQ2310ES-T1_GE3

SQ2310ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2310ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 20V 6A 2W AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
9 ns
Forward Transconductance - Min
27 S
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-236-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
8.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
24 mOhms
Rise Time
8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
21 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
400 mV

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Perfectly.
Works. Recommend
Lisää

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Aiheeseen liittyvät avainsanat SQ23

  • SQ2310ES-T1_GE3 Integroitu
  • SQ2310ES-T1_GE3 RoHS
  • SQ2310ES-T1_GE3 PDF-tietosivu
  • SQ2310ES-T1_GE3 Datalehdet
  • SQ2310ES-T1_GE3 Osa
  • SQ2310ES-T1_GE3 Ostaa
  • SQ2310ES-T1_GE3 Jakelija
  • SQ2310ES-T1_GE3 PDF
  • SQ2310ES-T1_GE3 Component
  • SQ2310ES-T1_GE3 ICS
  • SQ2310ES-T1_GE3 Lataa PDF
  • SQ2310ES-T1_GE3 Lataa tiedot
  • SQ2310ES-T1_GE3 Toimittaa
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  • SQ2310ES-T1_GE3 Kuva
  • SQ2310ES-T1_GE3 Kuva
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  • SQ2310ES-T1_GE3 Kuumat tarjoukset
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  • SQ2310ES-T1_GE3 Tekniset tiedot

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