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TK10P60W,RVQ

TK10P60W,RVQ
Kuvat ovat vain viitteellisiä
Osa numero
TK10P60W,RVQ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
9.7 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
80 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
22 ns
Series
TK10P60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thank you very much! Very fast shipping. High quality. Very good seller.
Takes 8 days to Japan. Good!
Thank You all fine, packed very well
Perfectly.
Everything is excellent! recommend this seller!
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Aiheeseen liittyvät avainsanat TK10

  • TK10P60W,RVQ Integroitu
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Suositut haut

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