Osa numero TK100S04N1L,LQ Luokat MOSFET RoHS Datalehdet TK100S04N1L,LQ Kuvaus MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 19 ns Height 2.3 mm Id - Continuous Drain Current 100 A Length 6.5 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 100 W Product Type MOSFET Qg - Gate Charge 76 nC Rds On - Drain-Source Resistance 1.9 mOhms Rise Time 8 ns Series TK100S04N1L Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 80 ns Typical Turn-On Delay Time 23 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 5.5 mm