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SQ4949EY-T1_GE3

SQ4949EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4949EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns
Id - Continuous Drain Current
7.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
30 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
28 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
28 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Quickly came to CET, all in one package. Look at the rules
I received the product right, thank you very much 2018/12/03 ★★★★★
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
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Aiheeseen liittyvät avainsanat SQ49

  • SQ4949EY-T1_GE3 Integroitu
  • SQ4949EY-T1_GE3 RoHS
  • SQ4949EY-T1_GE3 PDF-tietosivu
  • SQ4949EY-T1_GE3 Datalehdet
  • SQ4949EY-T1_GE3 Osa
  • SQ4949EY-T1_GE3 Ostaa
  • SQ4949EY-T1_GE3 Jakelija
  • SQ4949EY-T1_GE3 PDF
  • SQ4949EY-T1_GE3 Component
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  • SQ4949EY-T1_GE3 Lataa PDF
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  • SQ4949EY-T1_GE3 Tekniset tiedot

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