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SQ4937EY-T1_GE3

SQ4937EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4937EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 8 ns
Height
1.75 mm
Id - Continuous Drain Current
5 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
15 nC, 15 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
56 mOhms, 56 mOhms
Rise Time
8 ns, 8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
15 ns, 15 ns
Typical Turn-On Delay Time
6 ns, 6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
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Aiheeseen liittyvät avainsanat SQ49

  • SQ4937EY-T1_GE3 Integroitu
  • SQ4937EY-T1_GE3 RoHS
  • SQ4937EY-T1_GE3 PDF-tietosivu
  • SQ4937EY-T1_GE3 Datalehdet
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  • SQ4937EY-T1_GE3 PDF
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  • SQ4937EY-T1_GE3 Tekniset tiedot

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