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SQ4920EY-T1_GE3

SQ4920EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4920EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 30V 8A 4.4W AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 8 ns
Forward Transconductance - Min
43 S, 43 S
Height
1.75 mm
Id - Continuous Drain Current
8 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
4.4 W
Product Type
MOSFET
Qg - Gate Charge
30 nC, 30 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
13 mOhms
Rise Time
10 ns, 10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
25 ns, 25 ns
Typical Turn-On Delay Time
7 ns, 7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
fast delivery, item as described, thanks!!
High Quality driver, works excellent. It came to Moscow for 7 days.
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
Looks good
Lisää

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Aiheeseen liittyvät avainsanat SQ49

  • SQ4920EY-T1_GE3 Integroitu
  • SQ4920EY-T1_GE3 RoHS
  • SQ4920EY-T1_GE3 PDF-tietosivu
  • SQ4920EY-T1_GE3 Datalehdet
  • SQ4920EY-T1_GE3 Osa
  • SQ4920EY-T1_GE3 Ostaa
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  • SQ4920EY-T1_GE3 PDF
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  • SQ4920EY-T1_GE3 Lataa PDF
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  • SQ4920EY-T1_GE3 Tekniset tiedot

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