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SQ2318AES-T1_GE3

SQ2318AES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2318AES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Channel 40V AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.7 ns
Forward Transconductance - Min
30 s
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
8.7 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
31 mOhms
Rise Time
8.4 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
7.5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Uusimmat arvostelut

Kirjoita oma Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
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Aiheeseen liittyvät avainsanat SQ23

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