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SQ4946AEY-T1_GE3

SQ4946AEY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4946AEY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V 7A 4W AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
2.1 ns, 2.1 ns
Forward Transconductance - Min
15 S, 15 S
Height
1.75 mm
Id - Continuous Drain Current
7 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
4 W
Product Type
MOSFET
Qg - Gate Charge
18 nC, 18 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
33 mOhms, 33 mOhms
Rise Time
3.3 ns, 3.3 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
22.4 ns, 22.4 ns
Typical Turn-On Delay Time
7 ns, 7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Thank You all fine, packed very well
Perfectly.
High Quality driver, works excellent. It came to Moscow for 7 days.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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Aiheeseen liittyvät avainsanat SQ49

  • SQ4946AEY-T1_GE3 Integroitu
  • SQ4946AEY-T1_GE3 RoHS
  • SQ4946AEY-T1_GE3 PDF-tietosivu
  • SQ4946AEY-T1_GE3 Datalehdet
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  • SQ4946AEY-T1_GE3 PDF
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  • SQ4946AEY-T1_GE3 Tekniset tiedot

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