SQ2361AEES-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ2361AEES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
2.8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
9 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Uusimmat arvostelut

Quick delivery. Secure packing. Excellent product. Thank you

Takes 8 days to Japan. Good!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Decent quality, not минвелл certainly, but enough decent

Great product. Arrived ahead of time. Thank you

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