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SQ2337ES-T1_GE3

SQ2337ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2337ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P-Channel 80V AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
3.5 s
Height
1.45 mm
Id - Continuous Drain Current
2.2 A
Length
2.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
11.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
290 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
18 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
80 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.6 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Goods came in two weeks. Well packed. Track number tracked
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Works. Recommend
Seems well have not tested
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Aiheeseen liittyvät avainsanat SQ23

  • SQ2337ES-T1_GE3 Integroitu
  • SQ2337ES-T1_GE3 RoHS
  • SQ2337ES-T1_GE3 PDF-tietosivu
  • SQ2337ES-T1_GE3 Datalehdet
  • SQ2337ES-T1_GE3 Osa
  • SQ2337ES-T1_GE3 Ostaa
  • SQ2337ES-T1_GE3 Jakelija
  • SQ2337ES-T1_GE3 PDF
  • SQ2337ES-T1_GE3 Component
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  • SQ2337ES-T1_GE3 Lataa PDF
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