FF225R12ME4PBPSA1

Kuvat ovat vain viitteellisiä

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Half Bridge
Continuous Collector Current at 25 C
450 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Module
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
20 mW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Uusimmat arvostelut

Yes, they are all here. :)

it is safe and sound all, thank you seller!

Shipping a little 1 weeks, normal packing, the procedure is complete.

The goods are OK, thank you dealers.

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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