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FF225R12ME4PB11BPSA1

FF225R12ME4PB11BPSA1
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tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Press Fit
Package / Case
152 mm x 62.5 mm x 20.5 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
20 mW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

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Uusimmat arvostelut

Kirjoita oma Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Everything is excellent! recommend this seller!
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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