FF225R12ME4_B11

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Press Fit
Package / Case
152 mm x 62.5 mm x 20.5 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1.05 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Uusimmat arvostelut

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

the photo in comparison with cheap. Delivery fast

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