SQ4961EY-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ4961EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Dual P-Channel 60V AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns
Forward Transconductance - Min
9 S
Height
1.75 mm
Id - Continuous Drain Current
4.4 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
13 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
36 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

Uusimmat arvostelut

Отличный продавец . Рекомендую.+++

Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .

Teşekkürler

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Aiheeseen liittyvät avainsanat SQ49

  • SQ4961EY-T1_GE3 Integroitu
  • SQ4961EY-T1_GE3 RoHS
  • SQ4961EY-T1_GE3 PDF-tietosivu
  • SQ4961EY-T1_GE3 Datalehdet
  • SQ4961EY-T1_GE3 Osa
  • SQ4961EY-T1_GE3 Ostaa
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  • SQ4961EY-T1_GE3 PDF
  • SQ4961EY-T1_GE3 Component
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  • SQ4961EY-T1_GE3 Lataa PDF
  • SQ4961EY-T1_GE3 Lataa tiedot
  • SQ4961EY-T1_GE3 Toimittaa
  • SQ4961EY-T1_GE3 toimittaja
  • SQ4961EY-T1_GE3 Hinta
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  • SQ4961EY-T1_GE3 Kuva
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  • SQ4961EY-T1_GE3 Kuumat tarjoukset
  • SQ4961EY-T1_GE3 Break Hinta
  • SQ4961EY-T1_GE3 Tekniset tiedot