Osa numero TK10Q60W,S1VQ Luokat MOSFET RoHS Datalehdet TK10Q60W,S1VQ Kuvaus MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 5.5 ns Height 6.1 mm Id - Continuous Drain Current 9.7 A Length 6.65 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-251-3 Pd - Power Dissipation 80 W Product Type MOSFET Qg - Gate Charge 20 nC Rds On - Drain-Source Resistance 327 mOhms Rise Time 22 ns Series TK10Q60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 2.3 mm