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TK10A80E,S4X

TK10A80E,S4X
Kuvat ovat vain viitteellisiä
Osa numero
TK10A80E,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
40 ns
Series
TK10A80E
Technology
SI
Tradename
MOSVIII
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
80 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quickly came to CET, all in one package. Look at the rules
Hello! Order received, very happy. Thank you very much!
Works. Recommend
Long Service and Russia!
Everything is fine!
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Aiheeseen liittyvät avainsanat TK10

  • TK10A80E,S4X Integroitu
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  • TK10A80E,S4X PDF-tietosivu
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  • TK10A80E,S4X Osa
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  • TK10A80E,S4X Jakelija
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  • TK10A80E,S4X Tekniset tiedot

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