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SQ2362ES-T1_GE3

SQ2362ES-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ2362ES-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Channel 60V AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
18 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
4.3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
7.6 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
68 mOhms
Rise Time
20 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
14 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank You all fine, packed very well
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The timer is running. 10 PCS. Packed properly.
Seems well have not tested
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Aiheeseen liittyvät avainsanat SQ23

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  • SQ2362ES-T1_GE3 PDF-tietosivu
  • SQ2362ES-T1_GE3 Datalehdet
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  • SQ2362ES-T1_GE3 Jakelija
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