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SQ1922EEH-T1_GE3

SQ1922EEH-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ1922EEH-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Configuration
Dual
Fall Time
6 ns
Id - Continuous Drain Current
840 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-70-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
700 pC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quick delivery. Secure packing. Excellent product. Thank you
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Decent quality, not минвелл certainly, but enough decent
Great product. Arrived ahead of time. Thank you
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Aiheeseen liittyvät avainsanat SQ19

  • SQ1922EEH-T1_GE3 Integroitu
  • SQ1922EEH-T1_GE3 RoHS
  • SQ1922EEH-T1_GE3 PDF-tietosivu
  • SQ1922EEH-T1_GE3 Datalehdet
  • SQ1922EEH-T1_GE3 Osa
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  • SQ1922EEH-T1_GE3 Jakelija
  • SQ1922EEH-T1_GE3 PDF
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  • SQ1922EEH-T1_GE3 Tekniset tiedot

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