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SQ1912AEEH-T1_GE3

SQ1912AEEH-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ1912AEEH-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
390 ns
Forward Transconductance - Min
2.6 S
Height
1 mm
Id - Continuous Drain Current
800 mA
Length
2.1 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.25 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
200 mOhms
Rise Time
108 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
715 ns
Typical Turn-On Delay Time
66 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
1.25 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Everything is fine!
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Well packed it for 1 weeks.
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Aiheeseen liittyvät avainsanat SQ19

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