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SQ1902AEL-T1_GE3

SQ1902AEL-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ1902AEL-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
18 ns
Forward Transconductance - Min
1.1 S
Id - Continuous Drain Current
780 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
430 mW
Product Type
MOSFET
Qg - Gate Charge
1.2 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
200 mOhms
Rise Time
22 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
600 mV

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
thanks for resending, this item is good !
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank You all fine, packed very well
Fast shippng. Good quality. I recomend this seller.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
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Aiheeseen liittyvät avainsanat SQ19

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  • SQ1902AEL-T1_GE3 PDF-tietosivu
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