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TK10A60D(STA4,Q,M)

TK10A60D(STA4,Q,M)
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
1.5 s
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
750 mOhms
Rise Time
22 ns
Series
TK10A60D
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Field Effect Transistor Silicon N Channel MOS Type
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
55 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
all exactly and work. радиолюбителя useful set to, thank you)
Quickly came to CET, all in one package. Look at the rules
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
it is safe and sound all, thank you seller!
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Aiheeseen liittyvät avainsanat TK10

  • TK10A60D(STA4,Q,M) Integroitu
  • TK10A60D(STA4,Q,M) RoHS
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  • TK10A60D(STA4,Q,M) Jakelija
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  • TK10A60D(STA4,Q,M) Break Hinta
  • TK10A60D(STA4,Q,M) Tekniset tiedot

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