TK10A80W,S4X

Kuvat ovat vain viitteellisiä
Osa numero
TK10A80W,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
9.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
19 nC
Rds On - Drain-Source Resistance
460 mOhms
Rise Time
35 ns
Series
TK10A80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
120 ns
Typical Turn-On Delay Time
65 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

Uusimmat arvostelut

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Hello! Order received, very happy. Thank you very much!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Everything is fine!

Aiheeseen liittyvät avainsanat TK10

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