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BF1105R,215

BF1105R,215
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tekniset tiedot

Luokat
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
it is safe and sound all, thank you seller!
Thank You all fine, packed very well
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Lisää

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