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BF1105R,215

BF1105R,215
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tekniset tiedot

Luokat
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

Porduct-luokka

Circuit Protection Circuit Protection 157,625 Tuotteet Connectors Connectors 2,137,436 Tuotteet Electromechanical Electromechanical 285,583 Tuotteet Embedded Solutions Embedded Solutions 103,645 Tuotteet Enclosures Enclosures 21,131 Tuotteet Engineering Development Tools Engineering Development Tools 46,355 Tuotteet Industrial Automation Industrial Automation 55,700 Tuotteet LED Lighting LED Lighting 67,469 Tuotteet Optoelectronics Optoelectronics 76,118 Tuotteet Passive Components Passive Components 2,029,037 Tuotteet Power Power 278,174 Tuotteet Semiconductors Semiconductors 575,056 Tuotteet Sensors Sensors 61,386 Tuotteet Test & Measurement Test & Measurement 20,391 Tuotteet

Uusimmat arvostelut

Kirjoita oma Reivew
Perfectly.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
the photo in comparison with cheap. Delivery fast
Long Service and Russia!
Lisää

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