TK16E60W5,S1VX

Kuvat ovat vain viitteellisiä
Osa numero
TK16E60W5,S1VX
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Power MOSFET N-Channel

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
15.1 mm
Id - Continuous Drain Current
15.8 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
43 nC
Rds On - Drain-Source Resistance
180 mOhms
Rise Time
40 ns
Series
TK16E60W5
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
75 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
4.45 mm

Uusimmat arvostelut

Thanks for your feedback!

everything as it is written in the description of the same deductible prodovtsu deserved

all exactly and work. радиолюбителя useful set to, thank you)

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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