Osa numero TK160F10N1L,LQ Luokat MOSFET RoHS Datalehdet TK160F10N1L,LQ Kuvaus MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 40 ns Id - Continuous Drain Current 160 A Maximum Operating Temperature + 175 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-220SMW-3 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 375 W Product Type MOSFET Qg - Gate Charge 122 nC Rds On - Drain-Source Resistance 2 mOhms Rise Time 22 ns Series TK160F10N1L Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 140 ns Typical Turn-On Delay Time 42 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V