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TK16E60W,S1VX

TK16E60W,S1VX
Kuvat ovat vain viitteellisiä
Osa numero
TK16E60W,S1VX
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
15.1 mm
Id - Continuous Drain Current
15.8 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
30 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
goods very well received very good quality
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
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Aiheeseen liittyvät avainsanat TK16

  • TK16E60W,S1VX Integroitu
  • TK16E60W,S1VX RoHS
  • TK16E60W,S1VX PDF-tietosivu
  • TK16E60W,S1VX Datalehdet
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  • TK16E60W,S1VX PDF
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  • TK16E60W,S1VX Tekniset tiedot

Suositut haut

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