TK16N60W,S1VF

Kuvat ovat vain viitteellisiä
Osa numero
TK16N60W,S1VF
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF

tekniset tiedot

Luokat
MOSFET
Configuration
Single
Fall Time
5 ns
Height
20.95 mm
Id - Continuous Drain Current
15.8 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16N60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.02 mm

Uusimmat arvostelut

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Everything is excellent! recommend this seller!

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.

I received the product right, thank you very much 2018/12/03 ★★★★★

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