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TK16J60W,S1VQ

TK16J60W,S1VQ
Kuvat ovat vain viitteellisiä
Osa numero
TK16J60W,S1VQ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
20 mm
Id - Continuous Drain Current
15.8 A
Length
15.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PN-3
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16J60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Looks good
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
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Aiheeseen liittyvät avainsanat TK16

  • TK16J60W,S1VQ Integroitu
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  • TK16J60W,S1VQ PDF-tietosivu
  • TK16J60W,S1VQ Datalehdet
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  • TK16J60W,S1VQ Tekniset tiedot

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