SQ3419EV-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ3419EV-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
31 ns
Forward Transconductance - Min
8 s
Id - Continuous Drain Current
6.9 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
11.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
48 mOhms
Rise Time
24 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
8 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Uusimmat arvostelut

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

Everything is excellent! recommend this seller!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

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