SQ3418EV-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ3418EV-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
37 ns
Forward Transconductance - Min
21 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
12.7 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
26 mOhms
Rise Time
28 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
6 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Uusimmat arvostelut

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Fast shippng. Good quality. I recomend this seller.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Long Service and Russia!

Great product. Arrived ahead of time. Thank you

Aiheeseen liittyvät avainsanat SQ34

  • SQ3418EV-T1_GE3 Integroitu
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  • SQ3418EV-T1_GE3 PDF-tietosivu
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  • SQ3418EV-T1_GE3 PDF
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