TK1K2A60F,S4X

Kuvat ovat vain viitteellisiä
Osa numero
TK1K2A60F,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch TT-MOSIX 600V 35W 740pF 6A

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Packaging
Tube
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
1.2 Ohms
Rise Time
16 ns
Series
TK1K2A60F
Technology
SI
Tradename
MOSIX
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
65 ns
Typical Turn-On Delay Time
35 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V

Uusimmat arvostelut

it is safe and sound all, thank you seller!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Thank You all fine, packed very well

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Aiheeseen liittyvät avainsanat TK1K

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