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TK1K7A60F,S4X

TK1K7A60F,S4X
Kuvat ovat vain viitteellisiä
Osa numero
TK1K7A60F,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET TO-220SIS PD=35W 1MHz PWR MOSFET TRNS
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
17 ns
Id - Continuous Drain Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Packaging
Tube
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
16 nC
Rds On - Drain-Source Resistance
1.7 Ohms
Rise Time
16 ns
Technology
SI
Tradename
MOSIX
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
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Aiheeseen liittyvät avainsanat TK1K

  • TK1K7A60F,S4X Integroitu
  • TK1K7A60F,S4X RoHS
  • TK1K7A60F,S4X PDF-tietosivu
  • TK1K7A60F,S4X Datalehdet
  • TK1K7A60F,S4X Osa
  • TK1K7A60F,S4X Ostaa
  • TK1K7A60F,S4X Jakelija
  • TK1K7A60F,S4X PDF
  • TK1K7A60F,S4X Component
  • TK1K7A60F,S4X ICS
  • TK1K7A60F,S4X Lataa PDF
  • TK1K7A60F,S4X Lataa tiedot
  • TK1K7A60F,S4X Toimittaa
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  • TK1K7A60F,S4X Lyijytön
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  • TK1K7A60F,S4X Kuumat tarjoukset
  • TK1K7A60F,S4X Break Hinta
  • TK1K7A60F,S4X Tekniset tiedot

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