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HUF76629D3ST

HUF76629D3ST
Kuvat ovat vain viitteellisiä
Osa numero
HUF76629D3ST
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
60 ns
Height
2.39 mm
Id - Continuous Drain Current
20 A
Length
6.73 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
41.5 mOhms
Rise Time
28 ns
Series
HUF76629D3S
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
67 ns
Typical Turn-On Delay Time
6.8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
16 V
Width
6.22 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Takes 8 days to Japan. Good!
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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Aiheeseen liittyvät avainsanat HUF7

  • HUF76629D3ST Integroitu
  • HUF76629D3ST RoHS
  • HUF76629D3ST PDF-tietosivu
  • HUF76629D3ST Datalehdet
  • HUF76629D3ST Osa
  • HUF76629D3ST Ostaa
  • HUF76629D3ST Jakelija
  • HUF76629D3ST PDF
  • HUF76629D3ST Component
  • HUF76629D3ST ICS
  • HUF76629D3ST Lataa PDF
  • HUF76629D3ST Lataa tiedot
  • HUF76629D3ST Toimittaa
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  • HUF76629D3ST Hinta
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  • HUF76629D3ST Break Hinta
  • HUF76629D3ST Tekniset tiedot

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