HUF75329D3ST

Kuvat ovat vain viitteellisiä
Osa numero
HUF75329D3ST
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 20a 55V N-Channel UltraFET

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
33 ns
Height
2.39 mm
Id - Continuous Drain Current
20 A
Length
6.73 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
128 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
26 mOhms
Rise Time
30 ns
Series
HUF75329D3S
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
55 V
Vgs - Gate-Source Voltage
20 V
Width
6.22 mm

Uusimmat arvostelut

goods very well received very good quality

Takes 8 days to Japan. Good!

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

High Quality driver, works excellent. It came to Moscow for 7 days.

Aiheeseen liittyvät avainsanat HUF7

  • HUF75329D3ST Integroitu
  • HUF75329D3ST RoHS
  • HUF75329D3ST PDF-tietosivu
  • HUF75329D3ST Datalehdet
  • HUF75329D3ST Osa
  • HUF75329D3ST Ostaa
  • HUF75329D3ST Jakelija
  • HUF75329D3ST PDF
  • HUF75329D3ST Component
  • HUF75329D3ST ICS
  • HUF75329D3ST Lataa PDF
  • HUF75329D3ST Lataa tiedot
  • HUF75329D3ST Toimittaa
  • HUF75329D3ST toimittaja
  • HUF75329D3ST Hinta
  • HUF75329D3ST Tietolomake
  • HUF75329D3ST Kuva
  • HUF75329D3ST Kuva
  • HUF75329D3ST inventaario
  • HUF75329D3ST kalusto
  • HUF75329D3ST Alkuperäinen
  • HUF75329D3ST halvin
  • HUF75329D3ST Erinomainen
  • HUF75329D3ST Lyijytön
  • HUF75329D3ST määrittely
  • HUF75329D3ST Kuumat tarjoukset
  • HUF75329D3ST Break Hinta
  • HUF75329D3ST Tekniset tiedot