FF200R12KS4

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Dual
Continuous Collector Current at 25 C
275 A
Gate-Emitter Leakage Current
400 nA
Height
30.5 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1.4 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
61.4 mm

Uusimmat arvostelut

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

High Quality driver, works excellent. It came to Moscow for 7 days.

Goods came in two weeks. Well packed. Track number tracked

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Good material. Great seller, efficient and insurance. Ok

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