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TK16V60W5,LVQ

TK16V60W5,LVQ
Kuvat ovat vain viitteellisiä
Osa numero
TK16V60W5,LVQ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET PWR MOSFET DTMOS PD=139W F=1
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Id - Continuous Drain Current
15.8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
DFN8x8-5
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
139 W
Product Type
MOSFET
Qg - Gate Charge
43 nC
Rds On - Drain-Source Resistance
245 mOhms
Rise Time
40 ns
Series
TK16G60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
75 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
3 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
Hello! Order received, very happy. Thank you very much!
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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Aiheeseen liittyvät avainsanat TK16

  • TK16V60W5,LVQ Integroitu
  • TK16V60W5,LVQ RoHS
  • TK16V60W5,LVQ PDF-tietosivu
  • TK16V60W5,LVQ Datalehdet
  • TK16V60W5,LVQ Osa
  • TK16V60W5,LVQ Ostaa
  • TK16V60W5,LVQ Jakelija
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  • TK16V60W5,LVQ Tekniset tiedot

Suositut haut

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