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GS-065-011-1-L

GS-065-011-1-L
Kuvat ovat vain viitteellisiä
Osa numero
GS-065-011-1-L
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 650V, 11 A, E-Mode GaN, Engineer Samples
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Product Type
MOSFET
Qg - Gate Charge
2 nC
Rds On - Drain-Source Resistance
380 mOhms
Series
GS-065
Technology
GaN Si
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V to 7 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thanks for your feedback!
Takes 8 days to Japan. Good!
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
The timer is running. 10 PCS. Packed properly.
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Aiheeseen liittyvät avainsanat GS-0

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