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GS-065-004-1-L

GS-065-004-1-L
Kuvat ovat vain viitteellisiä
Osa numero
GS-065-004-1-L
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 650V, 3.5 A, E-Mode GaN, Engineer Samples
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Product Type
MOSFET
Qg - Gate Charge
0.7 nC
Rds On - Drain-Source Resistance
1.194 Ohms
Series
GS-065
Technology
GaN Si
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V to 7 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Everything is fine!
I received the product right, thank you very much 2018/12/03 ★★★★★
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Aiheeseen liittyvät avainsanat GS-0

  • GS-065-004-1-L Integroitu
  • GS-065-004-1-L RoHS
  • GS-065-004-1-L PDF-tietosivu
  • GS-065-004-1-L Datalehdet
  • GS-065-004-1-L Osa
  • GS-065-004-1-L Ostaa
  • GS-065-004-1-L Jakelija
  • GS-065-004-1-L PDF
  • GS-065-004-1-L Component
  • GS-065-004-1-L ICS
  • GS-065-004-1-L Lataa PDF
  • GS-065-004-1-L Lataa tiedot
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