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GS-065-008-1-L

GS-065-008-1-L
Kuvat ovat vain viitteellisiä
Osa numero
GS-065-008-1-L
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Product Type
MOSFET
Qg - Gate Charge
1.5 nC
Rds On - Drain-Source Resistance
541 mOhms
Series
GS-065
Technology
GaN Si
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V to 7 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
Good material. Great seller, efficient and insurance. Ok
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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